Introduction of Electroforming
نویسندگان
چکیده
منابع مشابه
Nickel Plating and Electroforming
The material presented in this publication has been prepared for the general information of the reader and should not be used or relied on for specific applications without first securing competent advice. The Nickel Development Institute, its members, staff and consultants do not represent or warrant its suitability for any general or specific use and assume no liability or responsibility of a...
متن کاملCharacterization of electroforming-free titanium dioxide memristors
Metal-insulator-metal (MIM) structures based on titanium dioxide have demonstrated reversible and non-volatile resistance-switching behavior and have been identified with the concept of the memristor. Microphysical studies suggest that the development of sub-oxide phases in the material drives the resistance changes. The creation of these phases, however, has a number of negative effects such a...
متن کاملThe mechanism of electroforming of metal oxide memristive switches.
Metal and semiconductor oxides are ubiquitous electronic materials. Normally insulating, oxides can change behavior under high electric fields--through 'electroforming' or 'breakdown'--critically affecting CMOS (complementary metal-oxide-semiconductor) logic, DRAM (dynamic random access memory) and flash memory, and tunnel barrier oxides. An initial irreversible electroforming process has been ...
متن کاملa comparative move analysis of the introduction sections of ma theses by iranian and native post-graduate students
since esp received universal attention to smooth the path for academic studies and productions, a great deal of research and studies have been directed towards this area. swales’ (1990) model of ra introduction move analysis has served a pioneering role of guiding many relevant studies and has proven to be productive in terms of helpful guidelines that are the outcome of voluminous productions ...
15 صفحه اولChemical insight into electroforming of resistive switching manganite heterostructures.
We have investigated the role of the electroforming process in the establishment of resistive switching behaviour for Pt/Ti/Pr0.5Ca0.5MnO3/SrRuO3 layered heterostructures (Pt/Ti/PCMO/SRO) acting as non-volatile Resistance Random Access Memories (RRAMs). Electron spectroscopy measurements demonstrate that the higher resistance state resulting from electroforming of as-prepared devices is strictl...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of the Japan Society for Precision Engineering
سال: 2017
ISSN: 0912-0289,1882-675X
DOI: 10.2493/jjspe.83.841